High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process

Rana, V; Ishihara, R.; Hiroshima, Y; Abe, D; Inoue, S; Shimoda, T; Metselaar, JW; Beenakker, C.I.M.

High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process

Conference paper (2003)

Authors

V Rana Electronic Components, Technology and Materials -

R. Ishihara Electronic Components, Technology and Materials -

Y Hiroshima External organisation

D Abe External organisation

S Inoue External organisation

T Shimoda External organisation

JW Metselaar Electronic Components, Technology and Materials -

C.I.M. Beenakker Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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Published Date

2003

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials