Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

Conference paper (2018)

Authors

G. Limodio Photovoltaic Materials and Devices - EEMCS
G. Yang Photovoltaic Materials and Devices - EEMCS
P.A. Procel Moya Photovoltaic Materials and Devices - EEMCS
A.W. Weeber Photovoltaic Materials and Devices - EEMCS
O. Isabella Photovoltaic Materials and Devices - EEMCS
M. Zeman Electrical Sustainable Energy
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

This paper shows the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets. From lifetime analysis of our poly-Si and a-Si:H CSPCs, three FBC and one IBC architectures are devised to progressively increase efficiency (ç) and achieve record short-circuit current density (JSC): (i) a poly-poly cell (\eta = 19.6%); (ii) a selective emitter structure known as PeRFeCT (Passivated Emitter Rear and Front ConTacts, \eta = 20.0%); (iii) a so-called hybrid solar cell with poly-Si and a-Si:H CSPCs at rear and front, respectively (\eta = 21.0%); and (iv) an IBC solar cell with poly-Si CSPC (\eta = 23.0%, JSC = 42.2 mA/cm2).

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