High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

Journal article (2021)

Authors

Y. Sun Electronic Components, Technology and Materials - EEMCS , Chinese Academy of Sciences, Shenzhen Institute of Wide-bandgap Semiconductors
Xuanwu Kang Chinese Academy of Sciences
Shixiong Deng Hebei Semiconductor Research Institute, National University of Defense Technology
Yingkui Zheng Chinese Academy of Sciences
Ke Wei Chinese Academy of Sciences
Linwang Xu Hebei Semiconductor Research Institute
Hao Wu Chinese Academy of Sciences
Xinyu Liu Chinese Academy of Sciences
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2021 Y. Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu
DOI: https://doi.org/10.1088/1361-6641/abd835
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Published Date

2021

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.