Performance analysis of a-Si:H p-i-n solar cells with and without a buffer layer at the p/i interface

Journal article (2004)

Authors

G Munyeme External organisation
M. Zeman Electronic Components, Technology and Materials - EEMCS
REI Schropp External organisation
W.F. van der Weg External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2004

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Light soaking experiments have been conducted on a-Si:H p-i-n solar cells with a silicon carbide buffer layer at the p/i interface. The rate of light induced degradation in the performance of these solar cells is higher in the initial stages of light soaking and assumes the same levels as the cells without a buffer layer with prolonged light soaking. Computer modelling has revealed that a graded band gap buffer layer at the p/i interface containing a slightly acceptor doped defective layer next to the p-layer improves the initial performance of a-Si:H p-i-n solar cells. The modelling also reveals that the effect of the buffer layer on solar cell performance depends critically on the configuration and composition of the buffer layer. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)