Transposable Multiport SRAM-based In-Memory Compute Engine for Binary Spiking Neural Networks in 3nm FinFET

Abstract

Ultra-low power Edge AI hardware is in increasing demand due to the battery-limited energy budget of typical Edge devices such as smartphones, wearables, and IoT sensor systems. For this purpose, this Thesis introduces an ultra-low power event-driven SRAM-based Compute In-Memory (CIM) accelerator optimized for inference of Binary Spiking Neural Networks (B-SNNs). In this Thesis, a custom-designed 3nm SRAM cell is developed, with up to four read ports to improve inference performance and one transposable read/write port for efficient on-chip learning functionality. The event-based nature of SNNs is exploited to minimize the computation and memory cost. The design benefits from technology scaling of fully digital design by synthesizing the accelerator in the imec 3nm FinFET technology node. The proposed accelerator's performance is evaluated by running MNIST inference at 97.6% accuracy, achieving an impressive throughput of 44M inferences/s at 607 pJ/inference (3.2 fJ per synaptic operation) while running at 29 mW. The results demonstrate that the proposed accelerator provides an energy-efficient and high-performance solution for inference of Binary SNNs, opening up new possibilities for Edge AI applications.