A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C

Conference paper (2022)

Authors

T. Someya Electronic Instrumentation - EEMCS
J. Angevare Electronic Instrumentation - EEMCS
S. Pan Electronic Instrumentation - EEMCS
K.A.A. Makinwa Microelectronics
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2022 T. Someya, Vincent Van Hoek, J. Angevare, S. Pan, K.A.A. Makinwa
DOI: https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830266
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Published Date

2022

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.

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