High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process

Rana, V; Ishihara, R.; Hiroshima, Y; Abe, D; Inoue, S; Shimoda, T; Metselaar, JW; Beenakker, C. W J

High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process

Journal article (2004)

Authors

V Rana Electronic Components, Technology and Materials

R. Ishihara Electronic Components, Technology and Materials

Y Hiroshima External organisation

D Abe External organisation

S Inoue External organisation

T Shimoda External organisation

JW Metselaar Electronic Components, Technology and Materials

C. W J Beenakker Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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2004

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Research Group

Electronic Components, Technology and Materials

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