Interdigitated back-contacted structure

A different approach towards high-efficiency ultrathin copper indium gallium (di)selenide solar cells

Journal article (2020)

Authors

N. Rezaei Photovoltaic Materials and Devices - EEMCS
P.A. Procel Moya Photovoltaic Materials and Devices - EEMCS
Marcel Simor TNO Solliance
M. Zeman Electrical Sustainable Energy
O. Isabella Photovoltaic Materials and Devices - EEMCS
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2020 N. Rezaei, P.A. Procel Moya, Marcel Simor, Zeger Vroon, M. Zeman, O. Isabella
DOI: https://doi.org/10.1002/pip.3296
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Published Date

2020

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

An interdigitated back-contacted (IBC) configuration is proposed for submicron copper indium gallium (di)selenide (CIGS). In a modelling platform, the structure was opto-electrically optimized for maximum efficiency. The results are compared with a reference front/back-contacted (FBC) solar cell with similar absorber thickness and exhibiting 11.9% efficiency. The electrical passivation at the front side is accomplished by an Al2O3 layer, which is endowed with negative fixed charges. The results indicate that with an optimal geometry and engineered bandgap grading, the efficiency of the new IBC structure can reach 17%. Additionally, with a reasonably low defect density in the absorber layer, efficiencies as high as 19.7% and open-circuit voltage comparable with that of the record solar cell are possible with the IBC structure.