High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices

Conference paper (2017)

Authors

A.R. Qureshi Electronics - EEMCS , NED University of Engineering and Technology, Ampleon Netherlands
Mustafa Acar Ampleon Netherlands
Sergio Pires Ampleon Netherlands
L.C.N. de Vreede Electronics - EEMCS
Research Group
Electronics (EEMCS) (TU Delft)
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Published Date

2017

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.

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