Cryogenic-Aware Forward Body Biasing in Bulk CMOS

Overwater, R.W.J.; Babaie, Masoud; Sebastiano, F.

doi:10.1109/LED.2023.3337441

Cryogenic-Aware Forward Body Biasing in Bulk CMOS

Journal article (2023)

Authors

R.W.J. Overwater , QuTech Advanced Research Centre

Masoud Babaie Electronics -

F. Sebastiano QuTech Advanced Research Centre, Quantum Circuit Architectures and Technology -

DOI: https://doi.org/10.1109/LED.2023.3337441

Logic gates Cryo-CMOS Transistors MOS devices Threshold voltage Cryogenics Switching circuits Inverters Body biasing Bulk CMOS

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Published Date

2023

Language

English

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Abstract

Cryogenic CMOS (cryo-CMOS) circuits are often hindered by the cryogenic threshold-voltage increase. To mitigate such an increase, a forward body biasing (FBB) technique in bulk CMOS is proposed, which can operate up to the nominal supply without problematic leakage currents, thanks to the larger diode turn-on voltage at cryogenic temperatures. As a result, traditional circuits, such as pass-gates, can operate down to 4.2 K, and their performance is augmented, e.g., digital circuits speeding up by 1.62× or lowering their energy per transition and energy-delay product by 4.24× and 2.33× , respectively. Unlike back biasing in FD-SOI, here all FBB voltages remain within the supplies, hence enabling on-chip and device-specific biasing. The proposed FBB technique thus represents a valuable design tool for bulk cryo-CMOS circuits.

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