A multi-step etch method for fabricating slightly tapered through-silicon vias based on modified Bosch process

Journal article (2019)

Authors

Pengrong Lin Beijing Microelectronics Technology Institute

Xiaochen Xie Beijing Microelectronics Technology Institute

Yong Wang Beijing Microelectronics Technology Institute

Binhao Lian Beijing Microelectronics Technology Institute

Kouchi Zhang Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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http://resolver.tudelft.nl/uuid:aa43c75e-e9e7-458b-90bd-cf1ac855cfdf

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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this paper, a multi-step etching method based on Bosch process was investigated to fabricate a slightly tapered via. The diameter of vias was scaled from 40 to 100 µm. Isotropic etching step was added into Bosch process to control the angle of the tapered vias. The slope angle could be adjusted by changing the time settings of isotropic etching step. The influence of the platen temperature was also studied. The passivation and etching steps are extremely sensitive to temperature. Silicon grass could be formed at low temperature. The two different processes of isotropic SF6 etching and Cl2/HBr etching were also compared. The wrinkles and cracks were observed on the surface after treatment with isotropic SF6 etching. The Cl2/HBr etching method is much better for removing the scallops.

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