Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films

Journal article (2016)

Authors

O Yildirim Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research
Steffen Cornelius ChemE/Materials for Energy Conversion and Storage, Institute of Ion Beam Physics and Materials Research
A Smekhova Universität Duisburg-Essen, Moscow State University
M Butterling Institute of Radiation Physics
W Anwand Institute of Radiation Physics
Alexa-Sibylla Wagner Institute of Radiation Physics
C. Bähtz Institute of Ion Beam Physics and Materials Research, European Synchrotron Radiation Facility
R. Böttger Institute of Ion Beam Physics and Materials Research
K Potzger Institute of Ion Beam Physics and Materials Research
Research Group
ChemE/Materials for Energy Conversion and Storage
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Published Date

15-12-2016

Language

English

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Research Group

ChemE/Materials for Energy Conversion and Storage

Abstract

Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.

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