Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

Journal article (2016)

Authors

A.W.A. Elshaari Kavli institute of nanoscience Delft, QN/Kavli Nanolab Delft - AS , KTH Royal Institute of Technology
I.Z. Esmaeil Zadeh Kavli institute of nanoscience Delft, QN/Kavli Nanolab Delft - AS
K.D. Jöns Kavli institute of nanoscience Delft, QN/Kavli Nanolab Delft - AS , KTH Royal Institute of Technology
Val Zwiller KTH Royal Institute of Technology
Research Group
QN/Zwiller Lab
Copyright: © 2016 A.W.A. Elshaari, I.Z. Esmaeil Zadeh, K.D. Jöns, Val Zwiller
DOI: https://doi.org/10.1109/JPHOT.2016.2561622
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Published Date

01-06-2016

Language

English

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Research Group

QN/Zwiller Lab

Abstract

In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes show low temperature dependence at cryogenic temperatures and higher dependence as the temperature increases. We find the Thermo-optic coefficients of PECVD silicon nitride and silicon oxide to be 2.51 ± 0.08 E- 5 K-1 and 0.96 ± 0.09 E-5 K-1 at room temperature while decreasing by an order of magnitude when cooling to 18 K. To show the effect of variations in the thermo-optic coefficients on device performance, we study the tuning of a fully integrated electrically tunable filter as a function of voltage for different temperatures. The presented results provide new practical guidelines in designing photonic circuits for studying low-temperature optical phenomena.

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