Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C

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Journal article (2025)

Authors

Bruno T. Buijtendorp Tera-Hertz Sensing
A. Endo Tera-Hertz Sensing
W. Jellema ImPhys/Adam group, SRON–Netherlands Institute for Space Research
Kenichi Karatsu SRON–Netherlands Institute for Space Research, Tera-Hertz Sensing
K. Kouwenhoven Tera-Hertz Sensing, SRON–Netherlands Institute for Space Research
A. J. van der Linden SRON–Netherlands Institute for Space Research
H.M. Veen Optical Technologies, Tera-Hertz Sensing
Jochem J. A. Baselmans University of Cologne, Tera-Hertz Sensing, SRON–Netherlands Institute for Space Research
Sten Vollebregt Electronic Components, Technology and Materials
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Tera-Hertz Sensing
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Published Date

2025

Language

English

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Research Group

Tera-Hertz Sensing

Abstract

Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.

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PhysRevApplied.23.014035.pdf
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