High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Journal article (2019)

Authors

C. Han Photovoltaic Materials and Devices - EEMCS , Shenzhen Institute of Wide-bandgap Semiconductors, Nankai University
L. Mazzarella Photovoltaic Materials and Devices - EEMCS
Y. Zhao Photovoltaic Materials and Devices - EEMCS
G. Yang Photovoltaic Materials and Devices - EEMCS
P.A. Procel Moya Photovoltaic Materials and Devices - EEMCS
M. Tijssen Photovoltaic Materials and Devices - EEMCS
A.R. Bento Montes Photovoltaic Materials and Devices - EEMCS
O. Isabella Photovoltaic Materials and Devices - EEMCS
M. Zeman Electrical Sustainable Energy
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Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2019 C. Han, L. Mazzarella, Y. Zhao, G. Yang, P.A. Procel Moya, M. Tijssen, A.R. Bento Montes, O. Isabella, M. Zeman, More Authors
DOI: https://doi.org/10.1021/acsami.9b14709
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Published Date

2019

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In2O3 thin films with high μe (>60 cm2 V-1 s-1) have been extensively investigated, the research regarding anion doping is still under development. In particular, fluorine-doped indium oxide (IFO) shows promising optoelectrical properties; however, they have not been tested on c-Si solar cells with passivating contacts. Here, we investigate the properties of hydrogenated IFO (IFO:H) films processed at low substrate temperature and power density by varying the water vapor pressure during deposition. The optimized IFO:H shows a remarkably high μe of 87 cm2 V-1 s-1, a carrier density of 1.2 × 1020 cm-3, and resistivity of 6.2 × 10-4 ω cm. Then, we analyzed the compositional, structural, and optoelectrical properties of the optimal IFO:H film. The high quality of the layer was confirmed by the low Urbach energy of 197 meV, compared to 444 meV obtained on the reference indium tin oxide. We implemented IFO:H into different front/back-contacted solar cells with passivating contacts processed at high and low temperatures, obtaining a significant short-circuit current gain of 1.53 mA cm-2. The best solar cell shows a conversion efficiency of 21.1%.