Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.

Jiang, ZX; Backer, S; Lee, JJ; Wu, LY; Guenther, T; Sieloff, D; Choi, P; Foisy, M; Alkemade, Paul F.A.

Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.

Journal article (2000)

Authors

ZX Jiang External organisation

S Backer External organisation

JJ Lee External organisation

LY Wu External organisation

T Guenther External organisation

D Sieloff External organisation

P Choi External organisation

M Foisy External organisation

Paul F.A. Alkemade Old - sect Electronic Materials (NS/EM)

Research Group

Old - sect Electronic Materials (NS/EM)

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Published Date

2000

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Research Group

Old - sect Electronic Materials (NS/EM)

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