23.5 A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from -55°C to 125°C

Conference paper (2023)

Authors

Z. Tang Electronic Instrumentation - EEMCS
S. Pan Electronic Instrumentation - EEMCS , Tsinghua University
K.A.A. Makinwa Microelectronics
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2023 Z. Tang, S. Pan, K.A.A. Makinwa
DOI: https://doi.org/10.1109/ISSCC42615.2023.10067695
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

BJT-based temperature sensors are widely used because they can achieve excellent accuracy after 1-point calibration. However, they typically dissipate mu textWs of power and require supply voltages above 1V [1]. Although sensors based on DTMOSTs [2], [3], capacitively biased (CB) diodes and BJTs [4,5] have demonstrated sub-1V operation, this comes at the expense of accuracy. This paper presents a sub-1V CB BJT-based temperature sensor that achieves a 1-point-trimmed inaccuracy of 0.15°C (3σ) from -55 circC to 125 circC, which is 4times better than the CB BJT state-of-the-art [4]. It also achieves a resolution FoM of 0.34pJ.K2, which is 6.8 times better than that of state-of-the-art BJT-based sensors with a similar accuracy [1], [6], (Fig. 23.5.6).

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