Josephson Effect in a Few-Hole Quantum Dot

Journal article (2018)

Authors

Joost Ridderbos University of Twente
Matthias Brauns Institute of Science and Technology Austria, University of Twente
J. Shen QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
F.K. de Vries QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Ang Li Beijing University of Technology, Eindhoven University of Technology
E.P.A.M. Bakkers QN/Bakkers Lab , Eindhoven University of Technology
Alexander Brinkman University of Twente
Floris A. Zwanenburg University of Twente
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
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Published Date

2018

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

A Ge–Si core–shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.