Microwave-induced resistance oscillations in a back-gated GaAs quantum well

Journal article (2017)

Authors

X. Fu University of Minnesota
Q. A. Ebner University of Minnesota Twin Cities
Q. Shi University of Minnesota
M. A. Zudov University of Minnesota Twin Cities
Q Qian Purdue University
J.D. Watson QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, Purdue University, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Michael J. Manfra Purdue University
Research Group
FTQC/Bertels Lab
Copyright: © 2017 X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, J.D. Watson, M. J. Manfra
DOI: https://doi.org/10.1103/PhysRevB.95.235415
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Published Date

2017

Language

English

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Research Group

FTQC/Bertels Lab

Abstract

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov-de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

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