Gas Source MBE growth of Si/SiGe device materials

Werner, K; Storm, A.J.; Butzke, S; Maes, JWH; van Rooy, M; Alkemade, P. F.A.; Algra, E; Somers, MAJ; de Lange, BGM; van der Drift, EWJM; Zijlstra, T; Radelaar, S

Gas Source MBE growth of Si/SiGe device materials

Journal article (1996)

Authors

K Werner QN/Fysics of NanoElectronics

A.J. Storm QN/Quantum Transport

S Butzke External organisation

JWH Maes Old organisation TN/TechnischeNatuurkunde voorm

M van Rooy External organisation

P. F.A. Alkemade Old - sect Electronic Materials (NS/EM)

E Algra External organisation

MAJ Somers External organisation

BGM de Lange QN/Fysics of NanoElectronics

EWJM van der Drift QN/Kavli Nanolab Delft

T Zijlstra QN/Kavli Nanolab Delft

S Radelaar OLD Metals Processing, Microstructures and Properties

Research Group

QN/Fysics of NanoElectronics

To reference this document use:

http://resolver.tudelft.nl/uuid:77dc2766-41e0-48a1-857f-fc880c744193

More Info

expand_more

Published Date

1996

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Fysics of NanoElectronics

No files available

Metadata only record. There are no files for this journal article.