Gas Source MBE growth of Si/SiGe device materials

Werner, K; Storm, A.J.; Zijlstra, T; Radelaar, S; Butzke, S; Maes, JWH; van Rooy, M; Alkemade, P.F.A.; Algra, E; Somers, MAJ; de Lange, BGM; van der Drift, E.W.J.M.

Gas Source MBE growth of Si/SiGe device materials

Journal article (1996)

Authors

K Werner QN/Fysics of NanoElectronics

A.J. Storm QN/Quantum Transport

T Zijlstra QN/Kavli Nanolab Delft -

S Radelaar OLD Metals Processing, Microstructures and Properties

S Butzke External organisation

JWH Maes Old organisation TN/TechnischeNatuurkunde voorm

M van Rooy External organisation

P.F.A. Alkemade Old - sect Electronic Materials (NS/EM)

E Algra External organisation

MAJ Somers External organisation

BGM de Lange QN/Fysics of NanoElectronics

E.W.J.M. van der Drift QN/Kavli Nanolab Delft -

Research Group

QN/Fysics of NanoElectronics

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Published Date

1996

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Research Group

QN/Fysics of NanoElectronics