Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Evseev, S.B.; Nanver, L. K.; Rejaei Salmassi, B; Milosavljevic, S.

Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Journal article (2014)

Authors

S.B. Evseev Electronic Components, Technology and Materials

L. K. Nanver Electronic Components, Technology and Materials

B Rejaei Salmassi External organisation

S. Milosavljevic Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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Published Date

2014

Language

English

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Research Group

Electronic Components, Technology and Materials

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