Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Evseev, S.B.; Nanver, L. K.; Rejaei Salmassi, B; Milosavljevic, S.

Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

Journal article (2014)

Authors

S.B. Evseev Electronic Components, Technology and Materials -

L. K. Nanver Electronic Components, Technology and Materials -

B Rejaei Salmassi External organisation

S. Milosavljevic Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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http://resolver.tudelft.nl/uuid:6ae78cb4-d032-44a8-83e6-46a076b320a6

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Published Date

2014

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials