Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

Conference paper (2018)

Authors

Amir Mirza Gheytaghi Electronic Components, Technology and Materials -

Kouchi Zhang Electronic Components, Technology and Materials -

H. Ye Chongqing University

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Heat transfer Conductivity Mathematical model Transistors Nanoscale devices Heating systems

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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.

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