Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices

Journal article (2014)

Authors

Boni K. Boksteen University of Twente
Alessandro Ferrara University of Twente
Anco Heringa NXP Semiconductors
P.G. Steeneken NXP Semiconductors, QN/Steeneken Lab - AS
R.J.E. Hueting University of Twente
Research Group
QN/Steeneken Lab (AS) (TU Delft)
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Published Date

2014

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Steeneken Lab

Abstract

A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∝λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.