Overview of Wide/Ultra-Wide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Journal article (2023)

Authors

Sudip K. Mazumder University of Illinois at Chicago
Lars F. Voss Lawrence Livermore National Laboratory
K.M. Dowling Electronic Instrumentation - EEMCS
Adam Conway Raytheon Technologies
Robert J. Kaplar Sandia National Laboratories
Greg Pickrell Sandia National Laboratories
Jack Flicker Sandia National Laboratories
Andrew Binder Sandia National Laboratories
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Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2023 Sudip K. Mazumder, Lars F. Voss, K.M. Dowling, Adam Conway, David Hall, Robert J. Kaplar, Greg Pickrell, Jack Flicker, Andrew Binder, More Authors
DOI: https://doi.org/10.1109/JESTPE.2023.3277828
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.

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