Influence of depth in helium desorption from cavities induced by 3-He implantation in silicon

Conference paper (2001)

Authors

R Delamare External organisation
E Ntsoenzok External organisation
F. Labohm Old - Section Defects in Materials
A van Veen Old - Section Defects in Materials
Research Group
Old - Section Defects in Materials
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Published Date

2001

Language

Undefined/Unknown

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Research Group

Old - Section Defects in Materials