High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

Rana, V; Ishihara, R.; Hiroshima, Y; Abe, D; Inoue, S; Shimoda, T; Metselaar, JW; Beenakker, C.I.M.

High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

Journal article (2007)

Authors

V Rana Electronic Components, Technology and Materials -

R. Ishihara Electronic Components, Technology and Materials -

Y Hiroshima External organisation

D Abe External organisation

S Inoue External organisation

T Shimoda External organisation

JW Metselaar Electronic Components, Technology and Materials -

C.I.M. Beenakker Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

To reference this document use:

http://resolver.tudelft.nl/uuid:4e3e78f7-e93f-452b-8eee-0274d1050489

More Info

expand_more

Published Date

2007

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials