High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

Rana, V; Ishihara, R.; Hiroshima, Y; Abe, D; Inoue, S; Shimoda, T; Metselaar, JW; Beenakker, C. W J

High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

Journal article (2007)

Authors

V Rana Electronic Components, Technology and Materials

R. Ishihara Electronic Components, Technology and Materials

Y Hiroshima External organisation

D Abe External organisation

S Inoue External organisation

T Shimoda External organisation

JW Metselaar Electronic Components, Technology and Materials

C. W J Beenakker Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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2007

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Research Group

Electronic Components, Technology and Materials

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