Gate oxide induced switch-on undershoot current observed in thin-film transistors

Journal article (2005)

Authors

Feng Yan External organisation
P Migliorato External organisation
Y. Hong External organisation
V Rana Electronic Components, Technology and Materials - EEMCS
R. Ishihara Electronic Components, Technology and Materials - EEMCS
Y Hiroshima External organisation
D Abe External organisation
S Inoue External organisation
T Shimoda External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2005

Language

Undefined/Unknown

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials