High-Yield Growth and Characterization of 〈100〉 InP p-n Diode Nanowires

Journal article (2016)

Authors

Alessandro Cavalli Eindhoven University of Technology

Jia Wang Eindhoven University of Technology

I.Z. Esmaeil Zadeh QN/Quantum Nanoscience

M.E. Reimer University of Waterloo, QN/Quantum Transport

Marcel A. Verheijen Philips Innovation Services, Eindhoven University of Technology

M.C. Soini QN/Quantum Transport

Sébastien R. Plissard Eindhoven University of Technology, Université de Toulouse

V.G. Zwiller QN/Zwiller Lab , KTH Royal Institute of Technology

Jos E.M. Haverkort Eindhoven University of Technology

E.P.A.M. Bakkers Eindhoven University of Technology, QN/Bakkers Lab

Department

QN/Quantum Nanoscience

Nanowire P-n junction Indium phosphide 100,diode

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Published Date

11-05-2016

Language

English

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Department

QN/Quantum Nanoscience

Abstract

Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of 〈100〉 nanowires is crucial for integration. Here, we discuss doping of single-crystalline 〈100〉 nanowires, and the structural and optoelectronic properties of p-n junctions based on 〈100〉 InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a 〈100〉-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.