Thermal inductance in GaN devices

Journal article (2016)

Authors

H. Ye Ministry of Education of the People's Republic of China, Chongqing University
Stanley Leung Changzhou Institute of Technology Research for Solid State Lighting
K.Y. Wong Changzhou Institute of Technology Research for Solid State Lighting
Xianping Chen Chongqing University
Kai Lin Changzhou Institute of Technology Research for Solid State Lighting
J. Fan Changzhou Institute of Technology Research for Solid State Lighting
Signe Kjelstrup Norwegian University of Science and Technology (NTNU)
Xuejun Fan Lamar University
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2016 H. Ye, Stanley Y.Y. Leung, K.Y. Wong, Xianping Chen, Kai Lin, J. Fan, Signe Kjelstrup, Xuejun Fan, Kouchi Zhang
DOI: https://doi.org/10.1109/LED.2016.2612243
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Published Date

2016

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Using the analogue of the electric inductance, we reveal the properties of the thermal inductance in GaN-based light-emitting diode devices by testing their transient thermal behaviors. We find that the devices exhibit a transient thermal response under step-down or step-up currents and observe notable inductive phenomena of the temperature response as time evolves from start up to some hundred microseconds. We define thermal inductance as the rapid change in device temperature that is opposite to the temperature change expected from the power input. These findings can promote new temperature measurements, and novel thermal analyses of high-frequency semiconductor devices that combining the thermal resistances, thermal capacitances, and thermal inductances.