The influence of strain relaxation on the electrical properties of Si/SiGe resonant tunneling diodes.

Journal article (2000)

Authors

WP Lukey External organisation
J. Caro QN/Fysics of NanoElectronics
T Zijlstra QN/Kavli Nanolab Delft - AS
E.W.J.M. van der Drift QN/Kavli Nanolab Delft - AS
S Radelaar OLD Metals Processing, Microstructures and Properties
Research Group
QN/Fysics of NanoElectronics
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Published Date

2000

Language

Undefined/Unknown

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Research Group

QN/Fysics of NanoElectronics