Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes

Journal article (2016)

Authors

A. Holovchenko QN/van der Zant Lab - AS
J. Dugay QN/van der Zant Lab - AS
Mónica Giménez-Marqués Universitat de València
Ramón Torres-Cavanillas Universitat de València
Eugenio Coronado Universitat de València
H.S.J. van der Zant QN/van der Zant Lab - AS
Research Group
QN/van der Zant Lab (AS) (TU Delft)
More Info
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Published Date

07-09-2016

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/van der Zant Lab

Abstract

The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.