Enhancing the Stability of the Electron Density in Electrochemically Doped ZnO Quantum Dots

Journal article (2019)

Authors

S. Gudjónsdóttir ChemE/Opto-electronic Materials - AS
A.J. Houtepen ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
Copyright: © 2019 S. Gudjónsdóttir, A.J. Houtepen, Christel Koopman
DOI: https://doi.org/10.1063/1.5124534
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Published Date

2019

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

Electronic doping of semiconductor nanomaterials can be efficiently achieved using electrochemistry. However, the injected charge carriers are usually not very stable. After disconnecting the cell that is used for electrochemical doping the carrier density drops, typically in several minutes. While there are multiple possible causes for this, we demonstrate here, using n-doped ZnO quantum-dot films of variable thickness that the dominant mechanism is reduction of solvent impurities by the injected electrons. We subsequently investigate two different ways to enhance the doping stability of ZnO QD films. The first method uses preemptive reduction of the solvent impurities; the second method involves a solid covering the QD film, which hinders impurity diffusion to the film. Both methods enhance the doping stability of the QD films greatly

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