Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices

Buizert, C; Koppens, FHL; Pioro-Ladrière, M; Tranitz, HP; Vink, IT; Tarucha, S; Wegscheider, W; Vandersypen, Lieven

Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices

Journal article (2008)

Authors

C Buizert QN/Quantum Transport

FHL Koppens QN/Quantum Transport

M Pioro-Ladrière External organisation

HP Tranitz External organisation

IT Vink QN/Quantum Transport

S Tarucha QN/Theoretical Physics

W Wegscheider External organisation

Lieven Vandersypen QN/Quantum Transport

Research Group

QN/Quantum Transport

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Published Date

2008

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Research Group

QN/Quantum Transport

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