Advancement in screen printed fire through silver paste metallisation of polysilicon based passivating contacts

Conference paper (2021)

Authors

A. Chaudhary International Solar Energy Research Center (ISC), Photovoltaic Materials and Devices -

Jan Hoß International Solar Energy Research Center (ISC)

Jan Lossen International Solar Energy Research Center (ISC)

R.A.C.M.M. van Swaaij Photovoltaic Materials and Devices -

M. Zeman Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices () (TU Delft)

DOI: https://doi.org/10.1063/5.0055978

To reference this document use:

http://resolver.tudelft.nl/uuid:13ce9faa-6f18-473a-a222-6b92d98b511a

More Info

expand_more

Published Date

2021

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

We have metallised n+ polysilicon passivated layer structures deposited by Low Pressure Chemical Vapor Deposition (LPCVD) with silver pastes. We analysed recombination at the metal contacts by photoluminescence imaging of metallised lifetime samples and found for the best paste, metal semiconductor recombination current density values (J0met) below 70 fA/cm², with contact resistivity below 2 mΩcm². To our knowledge, these are among the lowest values reported so far for full size M2 wafers with 150 nm thin polysilicon layer and wet chemical thin oxide. We also studied the effect of the peak firing temperature on the J0met and contact resistivity in this work. Further, we performed Scanning Electron Microscopy to further understand the silver polysilicon interface.

Files

5.0055978.pdf

(pdf | 1.5 Mb)

Unknown license