Low-Power CMOS Smart Temperature Sensor With
a Batch-Calibrated Inaccuracy of ±0.25 °C (±3σ)
from −70 °C to 130 °C

Aita, AL; Pertijs, M.; Makinwa, K.A.A.; Huijsing, J.H.; Meijer, G.C.M.

doi:10.1109/JSEN.2013.2244033

Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of ±0.25 °C (±3σ) from −70 °C to 130 °C

Journal article (2013)

Authors

AL Aita Electronic Instrumentation -

M. Pertijs Electronic Instrumentation -

K.A.A. Makinwa Electronic Instrumentation -

J.H. Huijsing Electronic Instrumentation -

G.C.M. Meijer Electronic Instrumentation -

Research Group

Electronic Instrumentation () (TU Delft)

DOI: https://doi.org/10.1109/JSEN.2013.2244033

Batch calibration Smart temperature sensors Substrate PNP transistors

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Published Date

2013

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

In this paper, a low-power CMOS smart temperature sensor is presented. The temperature information extracted using substrate PNP transistors is digitized with a resolution of 0.03 °C using a precision switched-capacitor (SC) incremental
A/D converter. After batch calibration, an inaccuracy of ±0.25 °C (±3σ ) from −70 °C to 130 °C is obtained. This represents a two-fold improvement compared to the state-ofthe-art. After individual calibration at room temperature, an
inaccuracy better than ±0.1 °C over the military temperature range is obtained, which is in-line with the state-of-the-art. This performance is achieved at a power consumption of 65 μW during a measurement time of 100 ms, by optimizing the power/inaccuracy tradeoffs, and by employing a clock frequency
proportional to absolute temperature. The latter ensures accurate settling of the SC input stage at low temperatures, and reduces the effects of leakage currents at high temperatures.

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