Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

Journal article (2006)

Authors

A Klaver Electronic Components, Technology and Materials
V Nádazdy External organisation
M Zeman Electronic Components, Technology and Materials
René van Swaaij Electronic Components, Technology and Materials
Research Group
Electronic Components, Technology and Materials
More Info
expand_more

Published Date

2006

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

Electronic Components, Technology and Materials

No files available

Metadata only record. There are no files for this journal article.