High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates

Conference paper (2006)

Authors

H Sagkol Old - EWI Ch. Integrated Sensing Devices
B. Rajaei Salmasi Old - EWI Ch. Integrated Sensing Devices
JN Burghartz Old - EWI Ch. Integrated Sensing Devices
Research Group
Old - EWI Ch. Integrated Sensing Devices
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Published Date

2006

Language

Undefined/Unknown

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Research Group

Old - EWI Ch. Integrated Sensing Devices

Abstract

An optimized Saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively.

Keywords: Passive devices, Micromachining, RFIC, Inductors.