Tensile characterization and constitutive modeling of sintered nano-silver particles over a range of strain rates and temperatures

Journal article (2022)

Authors

Kouchi Zhang Electronic Components, Technology and Materials -

J. Fan Research Institute of Fudan University, Ningbo, Fudan University, Electronic Components, Technology and Materials - , Lamar University

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1016/j.microrel.2022.114536

Constitutive model Power electronics packaging Nano-silver sintering Anand model Variable-order fractional model

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Published Date

2022

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Sintered nano-silver die-attach materials have been widely used in high-power electronics packaging because of their high thermal and electrical conductivities. In this study, we characterized the tensile properties of sintered nano-silver particles over a range of strain rates and temperatures, and established the constitutive models. First, 50 nm nano-silver particles were sintered at 275 °C for 50 min as test samples, and their tensile tests were conducted under a dynamic thermomechanical analyzer (DMA Q800) and an IBTC 300SL in-situ mechanical test system respectively with different strain rates and ambient temperatures. Then, both Anand and variable-order fractional models (VoFM) were adopted to analyze the obtained stress-strain data and we studied their fitting accuracy and applicability. The results showed that: (1) The Young's modulus of the sintered nano-silver particles decreased with increasing temperature. In addition, the tensile strengths declined under lower strain rates and higher temperature conditions; (2) both the Anand model and VoFM characterized the tensile stress-strain properties of the sintered nano-silver material well. Compared to the Anand model, the VoFM utilized a simpler formula with fewer parameters and higher precision.

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