A 1 × 400 backside-illuminated SPAD sensor with 49.7 ps resolution, 30 pJ/sample TDCs fabricated in 3D CMOS technology for near-infrared optical tomography

Pavia, JM; Scandiuzzo, M.; Lindner, S.; Wolf, M; Charbon, E.

A 1 × 400 backside-illuminated SPAD sensor with 49.7 ps resolution, 30 pJ/sample TDCs fabricated in 3D CMOS technology for near-infrared optical tomography

Journal article (2015)

Authors

JM Pavia External organisation

M. Scandiuzzo Signal Processing Systems

S. Lindner External organisation

M Wolf External organisation

E. Charbon Signal Processing Systems

Research Group

Signal Processing Systems

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Published Date

2015

Language

English

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Research Group

Signal Processing Systems

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