We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈ 10 000 cm 2 V
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We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈ 10 000 cm 2 V-1 s-1) and the lowest sheet carrier density (≈ 5 × 10 12 cm-2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900 °C) display carrier densities in the range of ≈ 2-5 × 10 13 cm-2 and mobilities of ≈ 1000 cm 2 V-1 s-1 at 4 K. Reducing their carrier density by field effect to 8 × 10 12 cm-2 lowers their mobilities to ≈ 50 cm 2 V-1 s-1 bringing the conductance to the weak-localization regime.@en
