We have demonstrated corrugated horn antennas at 340 GHz and 560 GHz fabricated with deep reactive ion etching (DRIE) process on silicon. The measurement of a single 340 GHz antenna showed that the return loss and gain are approximately 25 dB and 21 dBi, respectively. The measurement of two of the 2x2 560 GHz array antenna showed that the return loss and directivity are 13 dB and 22 dB, respectively. All of the measured antennas had below -25 dB of the cross-polarization and symmetrical beam patterns. The silicon microfabrication technique allows fabrication of hundreds of horn antennas at once, allowing construction of multi-pixel heterodyne imagers and spectrometers at submillimeter wavelengths.

We have demonstrated corrugated horn antennas at 560 GHz fabricated with a deep reactive ion etching (DRIE) process on silicon. The measurement of two of the ( 2 times 2)560 GHz array antenna has shown that the return loss and directivity are 13 dB and 22 dB, respectively. All of the measured antennas had below-25 dB of the cross-polarization and symmetrical beam patterns. The silicon microfabrication technique enables us to build hundreds of horn antennas at once, allowing construction of multi-pixel heterodyne imagers and spectrometers at submillimeter wavelengths.