Stimulated terahertz emission due to electronic Raman scattering in silicon

Terahertz raman laser based on silicon doped with phosphorus

Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

Silicon donor and Stokes terahertz lasers

Stimulated terahertz stokes emission of silicon crystals doped with antimony donors

Laser transitions under resonant optical pumping of donor centres in Si:P

Stimulated THz emission from Si:P and Si: Bi under resonant intra-centre optical pumping

Stimulated THz emission from group V donors in silicon under intracenter photoexcitation

Stimulated THz emission from resonant intra-center optical pumped Si:P and Si:Bi

Si-based shallow donor far-infrared lasers

The emission spectra of optically pumped Si-based THz lasers

The Physics of optically pumped semiconductor bulk lasers for the 5 - 15 THz frequency range.

The p-Ge THz laser: properties under pulsed and mode locked operation.

RF mismatch of THz switching MQW structures.

The optical properties of the p-Ge THz laser with mesh outcoupler.

Frequency dependent properties of the mode locked p-Ge THz laser.

The pulsed and mode locked p-Ge THz laser: wavelength dependent properties.

Active modelocking of a p-Ge hot hole laser

Technical aspects of the mode locked p-Ge hot hole laser

Realisation of active mode locking of the p-Ge hot hole laser (invited keynote paper)