3D NAND memory devices are intrinsically very cost sensitive, implying that their size, and hence logic area must be limited in order to acquire a chip which is able to conquer the competitive market price. Market forecasts of upcoming NAND products predict Input/Output (I/O) speed increase well beyond 2 Gb/s that is the current industry standard. I/O bandwidth strongly correlates with the device technology used for logic and the current state-of-the-art planar devices are predicted to reach their maximum capabilities in the near future. Use of FinFET transistor is expected to substantially enhance I/O area-performance of 3D NAND memory logic, alleviating area restriction severity and providing a foundation for future periphery generations to come.

In this thesis, a 3D NAND compatible I/O able to achieve 8 Gb/s throughput has been developed using simulation of thermally stable Imec in-house developed 14 nm FinFET technology equivalent. To validate throughput quality, industry defined eye diagram standards are used. To determine area savings provided by utilizing FinFET devices, FinFET active transmitter area is benchmarked against 45 nm planar device setup achieving the same 8 Gb/s data rate performance. To ensure an unbiased comparison, two signaling topologies are used - single ended signaling (SES) and differential signaling (DS). To extend analysis, sensitivity of the design against various parameters such as data rate, voltage and temperature is explored.

It is concluded, that active area of FinFET driver is several times lower than that of similar planar transmitter (same power and throughput) for both SES and DS. Additionally, suitable use cases of DS and SES have been evaluated depending on environmental conditions investigated during sensitivity analysis. All in all, this research provides a baseline for planar-to-FinFET scaling in I/O system and guidelines in choosing signaling topology appropriately, depending on system constraints.