The digitization of smart catheters will dramatically increase the demand for reliable and high data transmission in the distal tips. Optical fiber is a good candidate to provide high-speed data transmission. However, the extremely small size of the smart catheter tip, with less than a few millimeters in diameter, hampers the integration of optical fiber connections in the catheter tip. Our work presents a stand-alone optical data link module (ODLM) with a dimension of 240 μm × 280 μm × 420 μm for use in a 1 mm diameter intravascular ultrasound (IVUS) smart catheter. The fabrication of the ODLM is based on the Flex-to-Rigid (F2R) integration technology. In the ODLM, the flexible interconnects reroute the electrical contacts of the flip-chipped vertical-cavity sur-face-emitting laser (VCSEL) to the side of the device. This design enables the ODLM to be mounted on a flex-PCB and fit into a 200-300 μm gap in the IVUS catheter tip. An optical fiber that runs parallel to the catheter shaft is self-aligned to a commercially available VCSEL by inserting it into the through-silicon hole (TSH) of the ODLM. Clear eye diagrams prove the stand-alone ODLM can transmit 25.8 Gb/s, 231-1 Pseudo-Random Binary Sequence (PRBS) when driven through a high-speed bias-tee. The BER test indicates that error-free operation can be achieved at an optical output of around -4 dBm.

Several Silicon on Insulator (SOI) wafer manufacturers are now offering products with customer‐defined cavities etched in the handle wafer, which significantly simplifies the fabrication of MEMS devices such as pressure sensors. This paper presents a novel cavity buried oxide (BOX) SOI substrate (cavity‐BOX) that contains a patterned BOX layer. The patterned BOX can form a buried microchannels network, or serve as a stop layer and a buried hard‐etch mask, to accurately pattern the device layer while etching it from the backside of the wafer using the cleanroom microfab-rication compatible tools and methods. The use of the cavity‐BOX as a buried hard‐etch mask is demonstrated by applying it for the fabrication of a deep brain stimulation (DBS) demonstrator. The demonstrator consists of a large flexible area and precisely defined 80 μm‐thick silicon islands wrapped into a 1.4 mm diameter cylinder. With cavity‐BOX, the process of thinning and separating the silicon islands was largely simplified and became more robust. This test case illustrates how cavity‐BOX wafers can advance the fabrication of various MEMS devices, especially those with complex geometry and added functionality, by enabling more design freedom and easing the optimization of the fabrication process.