This paper presents a noise analysis and noise measurementsof n-type and p-type pixels with correlated multiple sampling(CMS) technique. The output noise power spectral density (PSD)of both pixel types with different CMS noise reduction factors havebeen simulated and calculated in the spectral domain. Forvalidation, two groups of test pixel have been fabricated with astate-of-the-art n-type and p-type CMOS image sensor (CIS)technology. The calculated and the measured noise results withCMS show a good agreement. Measurement results also show thatthe n-type and p-type pixels reach a 1.1 e- and 0.88 h+ inputreferredtemporal noise respectively with a board-level 64 timesdigital CMS and ×6 analog gain.@en