YH
Yan Huang
8 records found
1
Tuning of phosphor luminescence properties, including the emission energy/intensity and thermal stability, is an important way to develop superior luminescent materials for diverse applications. In this work, we discuss the effect of band gap engineering and energy transfer on th
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RbBaPO4:Eu2+ phosphors have been prepared by a high-temperature solid-state reaction method, and the structure was determined by Rietveld refinement based on powder X-ray diffraction (P-XRD) data. Their VUV-UV-vis photoluminescence properties are systematically investigated with
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In this work, the crystal structure and electronic structure as well as the synchrotron radiation vacuum ultraviolet-ultraviolet-visible (VUV-UV-vis) luminescence properties of Li
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A detailed investigation on photoluminescence properties and energy transfer (ET) dynamics of Ce3+, Pr3+-doped BaY2Si3O10 is provided along with the potential X-ray excited luminescence application. The luminescence propertie
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A series of Ln-doped KSrPO4 (Ln = Ce3+, Eu3+, Eu2+, Pr3+) phosphors are prepared through a high-temperature solid-state method. The KSrPO4 compound is confirmed to possess a β-K2SO4 structure
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RE3+ (RE = Pr, Sm, Tb, Er, Dy)-activated Y4Si2O7N2 samples were prepared by a solid-state reaction method at high temperature, and their photoluminescence properties were investigated. The absorption band located at about 250
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A series of Ba2-xEuxMgSi2O7 phosphors was prepared by a solid-state reaction method at high temperature. The theoretical density of the optimal Ba1.93Eu0.07MgSi2O7 material was calculated from the Rietveld refinement result. Eu L3-edge X-ray absorption near edge structure (XANES)
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A series of Ce3+-doped (Ca,Sr)2Al2SiO7 phosphors with different Ce3+ and Ca2+/Sr2+ concentrations were prepared by a high temperature solid-state reaction technique. To get insight into the structure-lum
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