This paper presents a detailed analysis on the impact of the emitter contact geometry on the performance of back contact-back junction (BC-BJ) c-Si solar cells by means of a TCAD-based electro-optical model. BC-BJ c-Si solar cells featuring a conventional linear-contact (LC) scheme and an advanced point-contact (PC) pattern are considered. In addition, the introduction of a selective emitter (SE) design in the PC structure and the effect of including multiple contacts in the emitter region of the considered BC-BJ solar cells are also investigated.