Nitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption limits application to the visible to near-IR spectral range. However, this work shows that a balance can be achieved between a sufficiently high index of refraction (n> 2) and an acceptable optical loss (k<10−3) in nitride-rich SiNx of appropriate composition (x∼1.45). Bragg reflectors with a design wavelength at λo= 330 nm are used for validation. PECVD is used for sample preparation and experiments confirm that the spectral range available for use of SiNx-based optical microsystems extends to wavelengths as low as 300 nm.@en

Fabry–Perot interferometers (FPIs), comprising foundry-compatible dielectric thin films on sapphire wafer substrates, were investigated for possible use in chemical sensing. Specifically, structures comprising two vertically stacked distributed Bragg reflectors (DBRs), with the lower DBR between a sapphire substrate and a silicon-oxide (SiO2) resonator layer and the other DBR on top of this resonator layer, were investigated for operation in the near-ultraviolet (near-UV) range. The DBRs are composed of a stack of nitride-rich silicon-nitride (SiNx) layers for the higher index and SiO2 layers for the lower index. An exemplary application would be formaldehyde detection at sub-ppm concentrations in air, using UV absorption spectroscopy in the 300–360 nm band, while providing spectral selectivity against the main interfering gases, notably NO2 and O3. Although SiNx thin films are conventionally used only for visible and near-infrared optical wavelengths (above 450 nm) because of high absorbance at lower wavelengths, this work shows that nitride-rich SiNx is suitable for near-UV wavelengths. The interplay between spectral absorbance, transmittance and reflectance in a FPI is presented in a comparative study between one FPI design using stoichiometric material (Si3N4) and two designs based on N-rich compositions, SiN1.39 and SiN1.49. Spectral measurements confirm that if the design accounts for phase penetration depth, sufficient performance can be achieved with the SiN1.49-based FPI design for gas absorption spectroscopy in near-UV, with peak transmission at 330 nm of 64%, a free spectral range (FSR) of 20 nm and a full-width half-magnitude spectral resolution (FWHM) of 2 nm.@en