This article discusses the various ways in which the stresses experienced by the IGBTs and diodes in a Dual Active Bridge (DAB) are asymmetric. This asymmetry can be between the two bridges or between IGBTs and diodes on both bridges. The terminal voltage, transformer ratio and the power through the DAB are varied to discuss the stresses. These asymmetrical stresses lead to devices' distinct temperatures. This unevenness of stresses can affect the lifetime of the devices employed. An analytical model of the DAB is used to analyse the currents and power losses in various devices. Some preliminary results of power losses in the devices are presented.