An integrated 132-147GHz power source with +27dBm EIRP

Conference paper (2020)

Authors

Akshay Visweswaran IMEC-Solliance
Alexander Haag Karlsruhe Institut für Technologie
C. De Martino Electronics - EEMCS
Karina Schneider Karlsruhe Institut für Technologie
Tim Maiwald Friedrich-Alexander-Universität Erlangen-Nürnberg
Bastien Vignon IMEC-Solliance
Klaus Aufinger Infineon Technologies AG
M. Spirito Electronics - EEMCS
Thomas Zwick Karlsruhe Institut für Technologie
Piet Wambacq IMEC-Solliance
Research Group
Electronics (EEMCS) (TU Delft)
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Published Date

2020

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13μm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 %. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80% over a 16% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.

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